Foil-based metallization of solar cells

ABSTRACT

Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

TECHNICAL FIELD

Embodiments of the present disclosure are in the field of renewableenergy and, in particular, include approaches for foil-basedmetallization of solar cells and the resulting solar cells.

BACKGROUND

Photovoltaic cells, commonly known as solar cells, are well knowndevices for direct conversion of solar radiation into electrical energy.Generally, solar cells are fabricated on a semiconductor wafer orsubstrate using semiconductor processing techniques to form a p-njunction near a surface of the substrate. Solar radiation impinging onthe surface of, and entering into, the substrate creates electron andhole pairs in the bulk of the substrate. The electron and hole pairsmigrate to p-doped and n-doped regions in the substrate, therebygenerating a voltage differential between the doped regions. The dopedregions are connected to conductive regions on the solar cell to directan electrical current from the cell to an external circuit coupledthereto.

Efficiency is an important characteristic of a solar cell as it isdirectly related to the capability of the solar cell to generate power.Likewise, efficiency in producing solar cells is directly related to thecost effectiveness of such solar cells. Accordingly, techniques forincreasing the efficiency of solar cells, or techniques for increasingthe efficiency in the manufacture of solar cells, are generallydesirable. Some embodiments of the present disclosure allow forincreased solar cell manufacture efficiency by providing novel processesfor fabricating solar cell structures. Some embodiments of the presentdisclosure allow for increased solar cell efficiency by providing novelsolar cell structures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1E illustrate cross-sectional views of various stages in thefabrication of a solar cell using foil-based metallization, inaccordance with an embodiment of the present disclosure, wherein:

FIG. 1A illustrates a stage in solar cell fabrication followingformation of optional metal seed regions on emitter regions formed abovea portion of a back surface of a substrate of a solar cell;

FIG. 1B illustrates the structure of FIG. 1A following optionalformation of a protection layer;

FIG. 1C illustrates the structure of FIG. 1B following adhering of ametal foil to a back surface thereof;

FIG. 1D illustrates the structure of FIG. 1C following formation oflaser grooves in the metal foil; and

FIG. 1E illustrates the structure of FIG. 1D following anodizing ofexposed surfaces of the metal foil.

FIG. 2 is a flowchart listing operations in a method of fabricating asolar cell as corresponding to FIGS. 1A-1E, in accordance with anembodiment of the present disclosure.

FIGS. 3A-3C illustrate cross-sectional views of various stages in thefabrication of a solar cell using foil-based metallization, inaccordance with another embodiment of the present disclosure, wherein:

FIG. 3A illustrates a stage in solar cell fabrication involvingplacement of an anodized metal foil above optional metal seed regionsformed on emitter regions formed above a portion of a back surface of asubstrate of a solar cell;

FIG. 3B illustrates the structure of FIG. 3A following welding of theanodized metal foil to a back surface thereof; and

FIG. 3C illustrates the structure of FIG. 3B following formation oflaser grooves in the anodized metal foil.

FIG. 4 is a flowchart listing operations in a method of fabricating asolar cell as corresponding to FIGS. 3A-3C, in accordance with anembodiment of the present disclosure.

FIG. 5 illustrates cross-sectional views of various stages in thefabrication of another solar cell using anodized foil-basedmetallization, in accordance with another embodiment of the presentdisclosure.

FIG. 6A illustrates a cross-sectional view of a portion of a solar cellhaving foil-based contact structures formed on emitter regions formed ina substrate, in accordance with an embodiment of the present disclosure.

FIG. 6B illustrates a cross-sectional view of a portion of a solar cellhaving anodized foil-based contact structures formed on emitter regionsformed in a substrate, in accordance with an embodiment of the presentdisclosure.

DETAILED DESCRIPTION

The following detailed description is merely illustrative in nature andis not intended to limit the embodiments of the subject matter or theapplication and uses of such embodiments. As used herein, the word“exemplary” means “serving as an example, instance, or illustration.”Any implementation described herein as exemplary is not necessarily tobe construed as preferred or advantageous over other implementations.Furthermore, there is no intention to be bound by any expressed orimplied theory presented in the preceding technical field, background,brief summary or the following detailed description.

This specification includes references to “one embodiment” or “anembodiment.” The appearances of the phrases “in one embodiment” or “inan embodiment” do not necessarily refer to the same embodiment.Particular features, structures, or characteristics may be combined inany suitable manner consistent with this disclosure.

Terminology. The following paragraphs provide definitions and/or contextfor terms found in this disclosure (including the appended claims):

“Comprising.” This term is open-ended. As used in the appended claims,this term does not foreclose additional structure or steps.

“Configured To.” Various units or components may be described or claimedas “configured to” perform a task or tasks. In such contexts,“configured to” is used to connote structure by indicating that theunits/components include structure that performs those task or tasksduring operation. As such, the unit/component can be said to beconfigured to perform the task even when the specified unit/component isnot currently operational (e.g., is not on/active). Reciting that aunit/circuit/component is “configured to” perform one or more tasks isexpressly intended not to invoke 35 U.S.C. §112, sixth paragraph, forthat unit/component.

“First,” “Second,” etc. As used herein, these terms are used as labelsfor nouns that they precede, and do not imply any type of ordering(e.g., spatial, temporal, logical, etc.). For example, reference to a“first” solar cell does not necessarily imply that this solar cell isthe first solar cell in a sequence; instead the term “first” is used todifferentiate this solar cell from another solar cell (e.g., a “second”solar cell).

“Coupled”—The following description refers to elements or nodes orfeatures being “coupled” together. As used herein, unless expresslystated otherwise, “coupled” means that one element/node/feature isdirectly or indirectly joined to (or directly or indirectly communicateswith) another element/node/feature, and not necessarily mechanically.

In addition, certain terminology may also be used in the followingdescription for the purpose of reference only, and thus are not intendedto be limiting. For example, terms such as “upper”, “lower”, “above”,and “below” refer to directions in the drawings to which reference ismade. Terms such as “front”, “back”, “rear”, “side”, “outboard”, and“inboard” describe the orientation and/or location of portions of thecomponent within a consistent but arbitrary frame of reference which ismade clear by reference to the text and the associated drawingsdescribing the component under discussion. Such terminology may includethe words specifically mentioned above, derivatives thereof, and wordsof similar import.

Approaches for foil-based metallization of solar cells and the resultingsolar cells are described herein. In the following description, numerousspecific details are set forth, such as specific process flowoperations, in order to provide a thorough understanding of embodimentsof the present disclosure. It will be apparent to one skilled in the artthat embodiments of the present disclosure may be practiced withoutthese specific details. In other instances, well-known fabricationtechniques, such as lithography and patterning techniques, are notdescribed in detail in order to not unnecessarily obscure embodiments ofthe present disclosure. Furthermore, it is to be understood that thevarious embodiments shown in the figures are illustrativerepresentations and are not necessarily drawn to scale.

Disclosed herein are methods of fabricating solar cells. In oneembodiment, a method of fabricating a solar cell involves forming aplurality of alternating N-type and P-type semiconductor regions in orabove a substrate. The method also involves adhering a metal foil to thealternating N-type and P-type semiconductor regions. The method alsoinvolves laser ablating through only a portion of the metal foil atregions corresponding to locations between the alternating N-type andP-type semiconductor regions. The method also involves, subsequent tothe laser ablating, anodizing the remaining metal foil to isolateregions of the remaining metal foil corresponding to the alternatingN-type and P-type semiconductor regions.

In another embodiment, a method of fabricating a solar cell involvesforming a plurality of alternating N-type and P-type semiconductorregions in or above a substrate. The method also involves adhering ananodized metal foil to the alternating N-type and P-type semiconductorregions, the anodized metal foil having an anodized top surface and ananodized bottom surface with a metal portion there between. Adhering theanodized metal foil to the alternating N-type and P-type semiconductorregions involves breaking through regions of the anodized bottom surfaceof the anodized metal foil. The method also involves laser ablatingthrough the anodized top surface and the metal portion of the anodizedmetal foil at regions corresponding to locations between the alternatingN-type and P-type semiconductor regions. The laser ablating terminatesat the anodized bottom surface of the anodized metal foil isolatingregions of the remaining metal foil corresponding to the alternatingN-type and P-type semiconductor regions.

Also disclosed herein are solar cells. In one embodiment, a solar cellincludes a substrate. A plurality of alternating N-type and P-typesemiconductor regions is disposed in or above the substrate. Aconductive contact structure is disposed above the plurality ofalternating N-type and P-type semiconductor regions. The conductivecontact structure includes a plurality of metal seed material regionsproviding a metal seed material region disposed on each of thealternating N-type and P-type semiconductor regions. A metal foil isdisposed on the plurality of metal seed material regions, the metal foilhaving anodized portions isolating metal regions of the metal foilcorresponding to the alternating N-type and P-type semiconductorregions.

One or more embodiments described herein are directed to, metal (such asaluminum) anodization-based metallization for solar cells. In oneembodiment, an aluminum metallization process for interdigitated backcontact (IBC) solar cells is disclosed. In one embodiment, an anodizingand subsequent laser grooving approach is disclosed.

In a first aspect, a laser grooving and subsequent anodizing approachprovides a new electrode patterning method for IBC solar cells based onthe laser patterning and anodizing of an aluminum (Al) foil (which hasbeen laser welded to the cell) to form an inter-digitated pattern ofcontact fingers. Embodiments of the first approach can be implemented toprovide a damage-free method to patterning an Al foil on the wafer,avoiding complex alignment and/or masking processes.

Consistent with the above referenced first aspect, FIGS. 1A-1Eillustrate cross-sectional views of various stages in the fabrication ofa solar cell using foil-based metallization, in accordance with anembodiment of the present disclosure. FIG. 2 is a flowchart listingoperations in a method of fabricating a solar cell as corresponding toFIGS. 1A-1E, in accordance with an embodiment of the present disclosure.

FIG. 1A illustrates a stage in solar cell fabrication followingformation of optional metal seed regions on emitter regions formed abovea portion of a back surface of a substrate of a solar cell. Referring toFIG. 1A and corresponding operation 202 of flowchart 200, a plurality ofalternating N-type and P-type semiconductor regions are formed above asubstrate. In particular, a substrate 100 has disposed there aboveN-type semiconductor regions 104 and P-type semiconductor regions 106disposed on a thin dielectric material 102 as an intervening materialbetween the N-type semiconductor regions 104 or P-type semiconductorregions 106, respectively, and the substrate 100. The substrate 100 hasa light-receiving surface 101 opposite a back surface above which theN-type semiconductor regions 104 and P-type semiconductor regions 106are formed.

In an embodiment, the substrate 100 is a monocrystalline siliconsubstrate, such as a bulk single crystalline N-type doped siliconsubstrate. It is to be appreciated, however, that substrate 100 may be alayer, such as a multi-crystalline silicon layer, disposed on a globalsolar cell substrate. In an embodiment, the thin dielectric layer 102 isa tunneling silicon oxide layer having a thickness of approximately 2nanometers or less. In one such embodiment, the term “tunnelingdielectric layer” refers to a very thin dielectric layer, through whichelectrical conduction can be achieved. The conduction may be due toquantum tunneling and/or the presence of small regions of directphysical connection through thin spots in the dielectric layer. In oneembodiment, the tunneling dielectric layer is or includes a thin siliconoxide layer.

In an embodiment, the alternating N-type and P-type semiconductorregions 104 and 106, respectively, are formed polycrystalline siliconformed by, e.g., using a plasma-enhanced chemical vapor deposition(PECVD) process. In one such embodiment, the N-type polycrystallinesilicon emitter regions 104 are doped with an N-type impurity, such asphosphorus. The P-type polycrystalline silicon emitter regions 106 aredoped with a P-type impurity, such as boron. As is depicted in FIG. 1A,the alternating N-type and P-type semiconductor regions 104 and 106 mayhave trenches 108 formed there between, the trenches 108 extendingpartially into the substrate 100. Additionally, in one embodiment, abottom anti-reflective coating (BARC) material 110 or other protectivelayer (such as a layer amorphous silicon) is formed on the alternatingN-type and P-type semiconductor regions 104 and 106, as is depicted inFIG. 1A.

In an embodiment, the light receiving surface 101 is a texturizedlight-receiving surface, as is depicted in FIG. 1A. In one embodiment, ahydroxide-based wet etchant is employed to texturize the light receivingsurface 101 of the substrate 100 and, possibly, the trench 108 surfacesas is also depicted in FIG. 1A. It is to be appreciated that the timingof the texturizing of the light receiving surface may vary. For example,the texturizing may be performed before or after the formation of thethin dielectric layer 102. In an embodiment, a texturized surface may beone which has a regular or an irregular shaped surface for scatteringincoming light, decreasing the amount of light reflected off of thelight receiving surface 101 of the solar cell. Referring again to FIG.1A, additional embodiments can include formation of a passivation and/oranti-reflective coating (ARC) layers (shown collectively as layer 112)on the light-receiving surface 101. It is to be appreciated that thetiming of the formation of passivation and/or ARC layers may also vary.

Referring again to FIG. 1A and now to corresponding optional operation204 of flowchart 200, a plurality of metal seed material regions 114 isformed to provide a metal seed material region on each of thealternating N-type and P-type semiconductor regions 104 and 106,respectively. The metal seed material regions 114 make direct contact tothe alternating N-type and P-type semiconductor regions 104 and 106.

In an embodiment, the metal seed regions 114 are aluminum regions. Inone such embodiment, the aluminum regions each have a thicknessapproximately in the range of 0.3 to 20 microns and include aluminum inan amount greater than approximately 97% and silicon in an amountapproximately in the range of 0-2%. In other embodiments, the metal seedregions 114 include a metal such as, but not limited to, nickel, silver,cobalt or tungsten.

FIG. 1B illustrates the structure of FIG. 1A following optionalformation of a protection layer. In particular, referring to FIG. 1B, aninsulating layer 116 is formed on the plurality of metal seed materialregions 114. In an embodiment, the insulating layer 116 is a siliconnitride of silicon oxynitride material layer.

FIG. 1C illustrates the structure of FIG. 1B following adhering of ametal foil to a back surface thereof. Referring to FIG. 1C andcorresponding operation 206 of flowchart 200, a metal foil 118 isadhered to the alternating N-type and P-type semiconductor regions bydirectly coupling portions of the metal foil 118 with a correspondingportion of each of the metal seed material regions 114. In one suchembodiment, the direct coupling of portions of the metal foil 118 with acorresponding portion of each of the metal seed material regions 114involves forming a metal weld 120 at each of such locations, as isdepicted in FIG. 1C. In another embodiment, in place of the metal seedregions 114, a blanket metal seed layer is used that is not patterned atthis stage of processing. In that embodiment, the blanket metal seedlayer may be patterned in a subsequent etching process, such as ahydroxide-based wet etching process.

In an embodiment, metal foil 118 is an aluminum (Al) foil having athickness approximately in the range of 5-100 microns and, preferably, athickness approximately in the range of 50-100 microns. In oneembodiment, the Al foil is an aluminum alloy foil including aluminum andsecond element such as, but not limited to, copper, manganese, silicon,magnesium, zinc, tin, lithium, or combinations thereof. In oneembodiment, the Al foil is a temper grade foil such as, but not limitedto, F-grade (as fabricated), O-grade (full soft), H-grade (strainhardened) or T-grade (heat treated).

In an embodiment, the metal foil 118 is adhered directly to theplurality of metal seed material regions 114 by using a technique suchas, but not limited to, a laser welding process, a thermal compressionprocess or an ultrasonic bonding process. In an embodiment, the optionalinsulating layer 116 is included, and adhering the metal foil 118 to theplurality of metal seed material regions 114 involves breaking throughregions of the insulating layer 116, as is depicted in FIG. 1C.

It is to be appreciated that, in accordance with another embodiment, aseedless approach may be implemented. In such an approach, metal seedmaterial regions 114 are not formed, and the metal foil 118 is adhereddirectly to the material of the alternating N-type and P-typesemiconductor regions 104 and 106. For example, in one embodiment, themetal foil 118 is adhered directly to alternating N-type and P-typepolycrystalline silicon regions.

FIG. 1D illustrates the structure of FIG. 1C following formation oflaser grooves in the metal foil. Referring to FIG. 1D and correspondingoperation 208 of flowchart 200, the metal foil 118 is laser ablatedthrough only a portion of the metal foil 118 at regions corresponding tolocations between the alternating N-type and P-type semiconductorregions 104 and 106, e.g., above trench 108 locations as is depicted inFIG. 1D. The laser ablating forms grooves 122 that extend partiallyinto, but not entirely through, the metal foil 118.

In an embodiment, forming laser grooves 122 involves laser ablating athickness of the metal foil 118 approximately in the range of 80-99% ofan entire thickness of the metal foil 118. That is, in one embodiment,it is critical that the lower portion of the metal foil 118 is notpenetrated, such that metal foil 118 protects the underlying emitterstructures.

In an embodiment, the laser ablation is performed mask-free; however, inother embodiments, a mask layer is formed on a portion of the metal foil118 prior to laser ablating, and is removed subsequent to laserablating. In one such embodiment, the mask is formed on either a portionof or on the entire foil area. In another embodiment, the mask is thenleft in place during the below described anodization process. In anembodiment, the mask is not removed at the end of the process. Inanother embodiment, however, the mask is not removed at the end of theprocess and is retained as a protection layer.

FIG. 1E illustrates the structure of FIG. 1D following anodizing ofexposed surfaces of the metal foil. Referring to FIG. 1E andcorresponding operation 210 of flowchart 200, the remaining metal foil118 is anodized at exposed surfaces thereof to isolate regions of theremaining metal foil 118 corresponding to the alternating N-type andP-type semiconductor regions 104 and 106. In particular, the exposedsurfaces of the metal foil 118, including the surfaces of the grooves122, are anodized to form an oxide coating 124. At locations 126corresponding to the alternating N-type and P-type semiconductor regions104 and 106, e.g., in the grooves 122 at locations above the trenches108, the entire remaining thickness of the metal foil 118 is anodizedthere through to isolate regions of metal foil 118 remaining above eachof the N-type and P-type semiconductor regions 104 and 106.

In an embodiment, the metal foil 118 is an aluminum foil, and anodizingthe metal foil involves forming aluminum oxide on the exposed andoutermost portions of the remaining portions of the metal foil 118. Inone such embodiment, anodizing the aluminum foil involves oxidizingexposed surfaces of the aluminum foil to a depth approximately in therange of 1-20 microns and, preferably to a depth approximately in therange of 5-20 microns. In an embodiment, in order to electricallyisolate contacting portion of the metal foil 118, the portions of themetal foil 118 at the bottom of the laser grooves 122 are completelyanodized, as is depicted in FIG. 1E. In an embodiment, openings 128 maybe made in portions of the oxide coating 124, as is also depicted inFIG. 1E, to enable contact to certain regions of the metal foil 118.

With reference again to FIG. 1E, in another embodiment, instead ofanodizing the metal foil to isolate portions of the metal foil, thepatterned metal foil is etched to isolate portions of the metal foil. Inone such embodiment, the structure of FIG. 1D is exposed to a wetetchant. Although the wet etchant etches all exposed portions of themetal foil, a carefully timed etch process is used to break through thebottoms of the laser grooves 122 without significantly reducing thethickness of the non-grooved regions of the metal foil. In a particularembodiment, a hydroxide based etchant is used, such as, but not limitedto, potassium hydroxide (KOH) or tetramethylammonium hydroxide (TMAH).

In a second aspect, an anodizing and subsequent laser grooving approachinvolves the implantation of anodized foils using anodized aluminumoxide (AAO) as a laser landing zone. The landing zone is then retainedto provide electrical insulation in the final solar cell.

Consistent with the above referenced second aspect, FIGS. 3A-3Cillustrate cross-sectional views of various stages in the fabrication ofa solar cell using foil-based metallization, in accordance with anotherembodiment of the present disclosure. FIG. 4 is a flowchart listingoperations in a method of fabricating a solar cell as corresponding toFIGS. 3A-3C, in accordance with an embodiment of the present disclosure.

FIG. 3A illustrates a stage in solar cell fabrication involvingplacement of an anodized metal foil above optional metal seed regionsformed on emitter regions formed above a portion of a back surface of asubstrate of a solar cell. Referring to FIG. 3A and correspondingoperation 402 of flowchart 400, a plurality of alternating N-type andP-type semiconductor regions are formed above a substrate. Inparticular, a substrate 300 has disposed there above N-typesemiconductor regions 304 and P-type semiconductor regions 306 disposedon a thin dielectric material 302 as an intervening material between theN-type semiconductor regions 304 or P-type semiconductor regions 306,respectively, and the substrate 300. The substrate 300 has alight-receiving surface 301 opposite a back surface above which theN-type semiconductor regions 304 and P-type semiconductor regions 306are formed.

In an embodiment, the substrate 300 is a monocrystalline siliconsubstrate, such as a bulk single crystalline N-type doped siliconsubstrate. It is to be appreciated, however, that substrate 300 may be alayer, such as a multi-crystalline silicon layer, disposed on a globalsolar cell substrate. In an embodiment, the thin dielectric layer 302 isa tunneling silicon oxide layer having a thickness of approximately 2nanometers or less. In one such embodiment, the term “tunnelingdielectric layer” refers to a very thin dielectric layer, through whichelectrical conduction can be achieved. The conduction may be due toquantum tunneling and/or the presence of small regions of directphysical connection through thin spots in the dielectric layer. In oneembodiment, the tunneling dielectric layer is or includes a thin siliconoxide layer.

In an embodiment, the alternating N-type and P-type semiconductorregions 304 and 306, respectively, are formed polycrystalline siliconformed by, e.g., using a plasma-enhanced chemical vapor deposition(PECVD) process. In one such embodiment, the N-type polycrystallinesilicon emitter regions 304 are doped with an N-type impurity, such asphosphorus. The P-type polycrystalline silicon emitter regions 306 aredoped with a P-type impurity, such as boron. As is depicted in FIG. 3A,the alternating N-type and P-type semiconductor regions 304 and 306 mayhave trenches 308 formed there between, the trenches 308 extendingpartially into the substrate 300.

In an embodiment, the light receiving surface 301 is a texturizedlight-receiving surface, as is depicted in FIG. 3A. In one embodiment, ahydroxide-based wet etchant is employed to texturize the light receivingsurface 301 of the substrate 300 and, possibly, the trench 308 surfacesas is also depicted in FIG. 3A. It is to be appreciated that the timingof the texturizing of the light receiving surface may vary. For example,the texturizing may be performed before or after the formation of thethin dielectric layer 302. In an embodiment, a texturized surface may beone which has a regular or an irregular shaped surface for scatteringincoming light, decreasing the amount of light reflected off of thelight receiving surface 301 of the solar cell. Referring again to FIG.3A, additional embodiments can include formation of a passivation and/oranti-reflective coating (ARC) layers (shown collectively as layer 312)on the light-receiving surface 301. It is to be appreciated that thetiming of the formation of passivation and/or ARC layers may also vary.

Referring again to FIG. 3A and now to corresponding optional operation404 of flowchart 400, a plurality of metal seed material regions 314 isformed to provide a metal seed material region on each of thealternating N-type and P-type semiconductor regions 304 and 306,respectively. The metal seed material regions 314 make direct contact tothe alternating N-type and P-type semiconductor regions 304 and 306.

In an embodiment, the metal seed regions 314 are aluminum regions. Inone such embodiment, the aluminum regions each have a thicknessapproximately in the range of 0.3 to 20 microns and include aluminum inan amount greater than approximately 97% and silicon in an amountapproximately in the range of 0-2%. In other embodiments, the metal seedregions 314 include a metal such as, but not limited to, nickel, silver,cobalt or tungsten.

Referring again to FIG. 3A, an anodized metal foil 318 is positionedabove the metal seed regions 314. In an embodiment, the anodized metalfoil 318 is an anodized aluminum foil having a coating 319 of aluminumoxide formed thereon. In one such embodiment, the anodized aluminum foil318 has a total thickness approximately in the range of 5-100 microns,and preferably in the range of 50-100 microns, with the anodized topsurface 319A and anodized bottom surface 319B each contributing athickness approximately in the range of 1-20 microns, and preferably inthe range of 5-20 microns. Thus, in an embodiment, the anodized metalfoil 318 has an anodized top surface (coating 319A) and an anodizedbottom surface (coating 319B) with a conductive metal portion therebetween. In an embodiment, the anodized metal foil 318 is an anodizedaluminum alloy foil including aluminum and second element such as, butnot limited to, copper, manganese, silicon, magnesium, zinc, tin,lithium, or combinations thereof. In an embodiment, the anodized metalfoil 318 is a temper grade anodized aluminum foil such as, but notlimited to, F-grade (as fabricated), O-grade (full soft), H-grade(strain hardened) or T-grade (heat treated).

FIG. 3B illustrates the structure of FIG. 3A following welding of theanodized metal foil to a back surface thereof. Referring to FIG. 3B andcorresponding operation 406 of flowchart 400, the anodized metal foil318 is adhered to the alternating N-type and P-type semiconductorregions 304 and 306 by directly coupling portions of the anodized metalfoil 318 with a corresponding portion of each of the metal seed materialregions 314. In one such embodiment, the direct coupling of portions ofthe anodized metal foil 318 with a corresponding portion of each of themetal seed material regions 314 involves forming a metal weld 320 ateach of such locations, as is depicted in FIG. 3B. In a particularembodiment, the anodized metal foil 318 is flattened on the back surfacewith a vacuum system and laser-welded on the metal seed layer followinga matrix of spot welds.

In an embodiment, the anodized metal foil 318 is adhered to theplurality of metal seed material regions 314 by using a technique suchas, but not limited to, a laser welding process, a thermal compressionprocess or an ultrasonic bonding process. In an embodiment, adhering theanodized metal foil 318 to the plurality of metal seed material regions314 involves breaking through the bottom surface oxide coating 319B, asis depicted in FIG. 3B.

In one embodiment (not shown, but similar to the description of FIG.1B), prior to adhering the anodized metal foil 318 to the plurality ofmetal seed material regions 314, an insulating layer is formed on theplurality of metal seed material regions 314. In that embodiment,adhering the anodized metal foil 314 to the plurality of metal seedmaterial regions 314 involves breaking through intervening regions ofthe insulating layer.

It is to be appreciated that, in accordance with another embodiment, aseedless approach may be implemented. In such an approach, metal seedmaterial regions 314 are not formed, and the anodized metal foil 318 isadhered directly to the material of the alternating N-type and P-typesemiconductor regions 304 and 306. For example, in one embodiment, theanodized metal foil 318 is adhered directly to alternating N-type andP-type polycrystalline silicon regions. In one such embodiment, theprocess involves breaking through the bottom surface oxide coating 319B.

FIG. 3C illustrates the structure of FIG. 3B following formation oflaser grooves in the anodized metal foil. Referring to FIG. 3C andcorresponding operation 408 of flowchart 400, the anodized metal foil318 is laser ablated through the anodized top surface 319A and thecentral metal portion of the anodized metal foil 318 at regionscorresponding to locations between the alternating N-type and P-typesemiconductor regions 304 and 306, e.g., above trench 308 locations asis depicted in FIG. 3C. The laser ablating terminates at the anodizedbottom surface 319B of the anodized metal foil 318, isolating regions ofthe remaining metal foil 318 corresponding to the alternating N-type andP-type semiconductor regions.

As such, the laser ablating forms grooves 322 that extend partiallyinto, but not entirely through, the anodized metal foil 318. In anembodiment, it is critical that the anodized bottom surface 319B of theanodized metal foil 318 is not penetrated, such that anodized metal foil318 protects the underlying emitter structures. Thus, the groove depthis accurately controlled to land in the bottom oxide layer of theanodized Al foil without cutting it fully. In an embodiment, the laserablation is performed mask-free; however, in other embodiments, a masklayer is formed on a portion of the anodized metal foil 318 prior tolaser ablating, and is removed subsequent to laser ablating.

In an embodiment, the approach described in association with FIGS. 3A-3Cfurther involves, prior to adhering the anodized metal foil 318 to thealternating N-type and P-type semiconductor regions 304 and 306, forminga laser reflecting or absorbing film on the anodized bottom surface 319Bof the anodized metal foil 318. In one such embodiment, the laserablating involves using an infra-red (IR) laser, and forming the laserreflecting or absorbing film involves forming a magenta film. Moregenerally, it is to be appreciated that embodiments involve the use of afilm color that is designed in accordance with the laser being used. Insuch an approach, the film color is selected to target reflection orablation. In the particular embodiment described, use of a magenta filmmeans it absorbs green and reflects blue and red. In an embodiment, atop film that is transparent to the laser light is applied to the uppersurface of the anodized metal foil. However, a reflecting film isapplied to the bottom surface of the anodized metal foil. In anotherembodiment, the bottom surface is a dyed anodized aluminum oxide layerthat can absorb approximately or greater than 85% of a laser pulse.

Referring again to FIG. 3C, a laser is used to finally pattern theanodized Al foil by forming grooves that follow an inter-digitatedpattern, which may be either parallel or perpendicular to the seedpattern. The above illustration demonstrates both a general approach andcan be applicable directly for parallel grooving. In another embodiment,the insulating surfaces of an anodized Al foil can be a benefit withincoarse metal two (M2) approaches, i.e., for perpendicular grooving, tocontact only fingers of a chosen polarity. In one such embodiment, theanodic aluminum oxide layer on the bottom of the foil prevents shuntingbetween fingers of opposite polarities and electrical contacts arefabricated from spot welds only.

FIG. 5 illustrates cross-sectional views of various stages in thefabrication of another solar cell using anodized foil-basedmetallization, in accordance with another embodiment of the presentdisclosure. Referring to part (a) of FIG. 5, an anodized aluminum foil518 is fit-up with substrate 500 having a plurality of metal seedregions 514 disposed thereon. Referring to part (b) of FIG. 5, laserwelding is performed to generate weld spots 520 adhering the foil 518 tothe metal seed region 514. Referring to part (c) of FIG. 5, laserpatterning is performed to provide laser grooves 522. In one embodiment,the pattern of the grooves is perpendicular to the pattern of the metalseed regions 514. In one embodiment, the laser ablation stops on ananodized bottom surface of the metal foil 518.

Embodiments described herein can be used to fabricate solar cells. Insome embodiments, referring to FIGS. 1E and 3C, a solar cell includes aplurality of alternating N-type (104 or 304) and P-type (106 or 306)semiconductor regions disposed above A substrate 100 or 300. Aconductive contact structure is disposed above the plurality ofalternating N-type and P-type semiconductor regions. The conductivecontact structure includes a plurality of metal seed material regions114 or 314 providing a metal seed material region disposed on each ofthe alternating N-type and P-type semiconductor regions. A metal foil118 or 318 is disposed on the plurality of metal seed material regions.The metal foil 118 or 318 has anodized portions 124 or 319 isolatingmetal regions of the metal foil 118 or 318 corresponding to thealternating N-type and P-type semiconductor regions. In one suchembodiment, all exposed surfaces of the metal foil 118 or 113 areanodized. However, in another embodiment, openings (e.g., 128) may beformed in the anodized portion for metal contact, such as described inassociation with FIG. 1E. In yet another embodiment, the foil isanodized prior to laser ablation, and a subsequent anodizing is notperformed. In that embodiment, the laser grooves 322 may havenon-anodized surfaces exposed, as is depicted in FIG. 3C. In anembodiment, the substrate 100 or 300 is an N-type monocrystallinesilicon substrate, and the plurality of alternating N-type (104 or 304)and P-type (106 or 306) semiconductor regions is disposed in apolycrystalline silicon material disposed above the substrate.

In yet other embodiment, the substrate is a monocrystalline siliconsubstrate, the alternating N-type and P-type semiconductor regions areformed in the monocrystalline silicon substrate. In a first example,FIG. 6A illustrates a cross-sectional view of a portion of a solar cellhaving foil-based contact structures formed on emitter regions formed ina substrate, in accordance with an embodiment of the present disclosure.Referring to FIG. 6A, a solar cell includes a plurality of alternatingN-type 604 and P-type 606 semiconductor regions disposed in a substrate600. A conductive contact structure is disposed above the plurality ofalternating N-type and P-type semiconductor regions. The conductivecontact structure includes a plurality of metal seed material regions614 providing a metal seed material region disposed on each of thealternating N-type and P-type semiconductor regions. A metal foil 618 isdisposed on the plurality of metal seed material regions 614. The metalfoil 618 has anodized portions 624 isolating metal regions of the metalfoil 618 corresponding to the alternating N-type and P-typesemiconductor regions 604 and 606, respectively.

In a second example, FIG. 6B illustrates a cross-sectional view of aportion of a solar cell having anodized foil-based contact structuresformed on emitter regions formed in a substrate, in accordance with anembodiment of the present disclosure. Referring to FIG. 6B, a solar cellincludes a plurality of alternating N-type 654 and P-type 656semiconductor regions disposed in a substrate 650. A conductive contactstructure is disposed above the plurality of alternating N-type andP-type semiconductor regions. The conductive contact structure includesa plurality of metal seed material regions 664 providing a metal seedmaterial region disposed on each of the alternating N-type and P-typesemiconductor regions. A metal foil 668 is disposed on the plurality ofmetal seed material regions 664. The metal foil 668 has anodizedportions 669 isolating metal regions of the metal foil 668 correspondingto the alternating N-type and P-type semiconductor regions 664 and 666,respectively.

In another aspect of the present disclosure, other embodiments buildingon the concepts described in association with the above exemplaryembodiments are provided. As a most general consideration, back contactsolar cells typically require patterned metal of two types of polarityon the backside of the solar cell. Where pre-patterned metal is notavailable due to cost, complexity, or efficiency reasons, low cost, lowmaterials processing of a blanket metal often favors laser-based patternapproaches.

For high efficiency cells, patterned metal on the back of the celltypically have two requirements: (1) complete isolation of the metal,and (2) damage free-processing. For mass-manufacturing, the process mayneeds to also be a high-throughput process, such as greater than 500wafers an hour throughput. For complex patterns, using a laser topattern thick (e.g., greater than 1 micron) or highly reflective metal(e.g., aluminum) on top of silicon can poses a substantial throughputproblem in manufacturing. Throughput issues may arise because the energynecessary to ablate a thick and/or highly reflective metal at a highrate requires a laser energy that is above the damage threshold of anunderlying emitter (e.g., greater than 1 J/cm²). Due to the necessity tohave the metal completely isolated and the variation in metal thicknessand laser energy, over-etching is often implemented for metalpatterning. In particular, there appears to be no single laser-energywindow at high-throughput/low cost available to completely remove metaland not expose the emitter to a damaging laser beam.

In accordance with embodiments of the present disclosure, variousapproaches to metal patterning are described. Furthermore, it is to beappreciated that, due to the interaction of the patterning process withthe metal bonding process, it is important to also consider bondingapproaches for bonding a first or seed metal layer (M1) to an uppermetal layer such as a foil (M2). As described in greater detail below,some bonding approaches enable various patterning options.

In an embodiment, different strengths of adhesion among foil (M2) bondedto a vapor deposited thin seed metal (M1) and, hence, to the underlyingdevice wafer, are achieved depending on bonding method. Furthermore,different types of failures modes are observed during the adhesion test.For laser bonding, adhesion can depend on the laser fluence (energy perfocused area). At lower fluences, the adhesion between M1 and M2 is tooweak and the M2 detaches easily. As the laser fluence increases, theadhesion by the welding between the foil and the underlying M1 seedlayer becomes strong enough to tear the foil during the adhesion test.When the laser fluence becomes even higher, the underlying M1 layerbecomes affected and the M1-device wafer bonding is broken before thefoil is torn off in a peeling test. To take advantage of such differentmodes of tearing, in one embodiment, a spatially shaped laser beam isused during the laser bonding process. The laser beam can have higherintensity (M1 tearing range) at the outer region and lower intensity (M2tearing range) on the inside, such that after the welding, the foil (M2)can be torn off along with the M1, while leaving the M2/M1 region underthe weld intact.

In another aspect, where wet chemical etchants are used to complete theisolation following a groove, the M1 may be exposed for long periods tothe etchant. During that time, undesirable etching may occur, or thechemistry may get trapped between M1 and M2 if M1 and M2 are notcompletely bonded together. In both scenarios, if the aluminum foil isbonded to the metal seed layer using a non-continuous bonding methodalong the metal fingers (e.g., low density of bonds, such as one bondevery 10 millimeters), the etching solution can penetrate at thefoil/metal seed interface and induce the undesired etching of M1 fingersand/or the attack of M1/M2 bonds, resulting in poor device performance.Bonding approaches can include laser welding, local thermo-compression,soldering and ultra-sonic bonding. Thus, not all bonding methods arecompatible with etch based patterning and, in particular, anylow-density bonding approaches such as laser welding, can becomeparticularly challenging.

In an embodiment, approaches described can be implemented to solve theabove described issues associated with wet chemical etchants byprotecting the M1 layer against chemical attack and allow for the use ofetching-based patterning processes. Embodiments may include the use oflaser welding as a bonding method, and laser grooving followed bychemical etching as a patterning method, but the concepts can beapplicable to other non-linear bonding methods and chemicaletching-based patterning methods.

In a first such embodiment, a blanket protective layer is depositedeither on the substrate after metal seed deposition, or on the foilbefore the laser welding process. Material choice and layer thicknessensures that laser welding can be achieved through the protective layer.The material may be resistant against the chemical etching treatment(e.g., KOH solution). Examples of suitable materials include, but arenot limited to, adhesives, silicones, polymers, or thin dielectrics. Ina second such embodiment, a thin capping layer (e.g., approximately 100nanometers in thickness) is deposited on top of a metal seed layer. Thethin capping layer is composed of a different metal (e.g., Ni) and isresistant against the chemical etching solution. In a specificembodiment, the thin capping layer is compatible with a laser weldingprocess between M1 and M2. In a third such embodiment, fingers of anetching resistant material (similar to the first embodiment) are printedin between M1 fingers and a thermal treatment is applied, before orafter laser welding, to ensure continuous adhesion between theprotective fingers and the M2 foil. In a specific embodiment, heatgenerated by the laser process is ultimately used to bond the protectivematerial fingers to the M2 layer. The interface between the foil and thefingers acts as a barrier against the etching solution. The material maybe thin and/or soft enough not to affect the foil fit-up and laserwelding process (e.g., an intimate M1/M2 contact is needed).

In a first exemplary process flow, a grooving and etching approachinvolves deposition of M1 (e.g., deposition of a seed conductive layercapable of bonding with M2) to the device side of the solar cell. A M2layer is the applied on the M1/cell and maintains contact suitable forbonding. Energy for bonding, e.g., thermo-compression or laser energy(e.g., long pulse duration (greater than 100 micro-seconds), is appliedto locally heat the M2, and bond M1 and M2. A groove is then formedmechanically or by another laser process (e.g., shorter pulse duration,less than approximately 1 micro-second) to provide a deep groove (e.g.,greater than approximately 80% of the foil thickness) and to trim thefoil from the foil applicator. Isolation of conductive regions is thenachieved, e.g., by applying etching media to the structure andselectively etching the remaining portion of the M2. In one embodiment,in order to increase the selectivity, a pre-patterned M1 layer isselected to provide etch resistance to the etching media, e.g., such asNi metal resistant to KOH etching. Potential M2 materials include, butare not limited to, aluminum, nickel, copper, titanium, chromium ormultilayer combinations thereof. With an aluminum M1 layer, the etchingmedia may include an alkaline chemistry such as potassium hydroxide oracidic chemistry such as a phosphoric acid or a mixture of phosphoricand nitric acids. The etching media is then thoroughly rinsed off fromthe wafer to complete the etching reaction and avoid leaving chemicalresidues on the wafer. Horizontal spray rinses and/or sonic agitationmay be utilized to fully remove chemistry from wafer.

In a second exemplary process flow, double step patterning is used basedon high power laser grooving plus low power laser isolation. The methodfirst involves deposition of M1 (e.g., a seed conductive layer suitableto laser weld with M2) on the device side of the solar cell andpatterning of the deposited M1 layer. An M2 layer is then applied on theM1/cell and maintains direct contact suitable for laser welding. Ahighly energetic beam (e.g., long pulse duration (greater thanapproximately 100 microseconds) laser or electron beam) is applied tolocally heat the M2, and to bond M1 and M2. An additional laser (e.g.,shorter pulse duration, less than approximately 1 micro-second) isapplied to provide a deep groove (e.g., greater than approximately 80%of the foil thickness) and to trim the foil from the foil applicator. Asecond low power laser is then applied along the laser groove to isolatethe remaining M2.

It is to be appreciated that grooving may be achieved through otherapproaches. For example, in another embodiment, instead of using a laserprocess, the above described grooving is formed with a mechanicalprocess such as, but not limited to, an array of hard-tipped cuttingtools dragged across the surface, kissing cutting, CNC milling, ionmilling, or other cutting type mechanism.

It is to be appreciated that remaining metal may be removed throughother approaches. For example, in another embodiment, following thegroove formation, the remaining metal is removed through use ofelectricity, such as with high currents, to burn-off the remaining metalby resistive heating. In another embodiment, following the grooveformation, the remaining metal is removed via a very soft/low throughputlaser ablation. In another embodiment, following the groove formation,the remaining metal is removed via other etching, such as plasmaetching, or back-sputter etching. In another embodiment, following thegroove formation, the remaining metal is removed by grasping or adheringto the metal region to be removed, and then “tearing off” the grasped oradhered section.

In a first specific embodiment of the tearing approach to remainingmetal removal, two parallel grooves are formed, leaving a strip of metalto be torn, the strip having a width approximately in the range of 100to 500 microns. In a second specific embodiment, the groove lines areextended outside of the solar cell to be used as tearing initiationpoints for the subsequent tearing procedure. In a third specificembodiment, prior to grooving, an M1/M2 bonding method is used, e.g.,laser welding spot (or lines), thermo-compression bonding, or other,that provides a stronger adhesion than the shear strength of the M2 foilthat is ultimately torn. In a fourth specific embodiment, a laser beamshape of a laser groove, or of the laser bonding laser, is used tomodify the mechanical properties of the metal, e.g., through adjustmentof the beam profile to tailor a cooling profile and modify thegrain-structure based on time and temperature. In this way, apost-groove isolation process is facilitated. In one such embodiment, aGaussian beam is distorted in shape to invert the peak such that theedge profile has higher energy and is used to form a line weld. Thehigher-local heating at the edge of the bond causes larger stress andchanges the cooling profile, and the edge of the welded material haseither a lower yield strength than the bulk, or is less ductile. In thiscase, during a tear process, the interface is the first to fail. In eachof the above four embodiments, that the metal seed layer can bepatterned before grooving, or patterned after grooving, preferably alongwith the post-grooving isolation described above.

In other embodiments, the M1 layer is protected from etchants throughuse of a capping layer, such as Ni, polymer, oxide, or thin adhesivedeposited on M1, or M2, with a thickness or composition compatible withthe welding process (e.g., less than approximately 10 microns forwelding through a polymer). In other embodiments, bonding is achievedwith a suitably high density (e.g., 100% as view from top down) toprotect from penetration of an etchant into gaps, and to avoidover-etching of the M1. The bonding may be effected via integration withthe bulk M2 (e.g., linear welding, thermo-compression bonding).

Although certain materials are described specifically above withreference to FIGS. 1A-1E, 3A-3C, 56A and 6B and to other describedembodiments, some materials may be readily substituted with others withother such embodiments remaining within the spirit and scope ofembodiments of the present disclosure. For example, in an embodiment, adifferent material substrate, such as a group III-V material substrate,can be used instead of a silicon substrate. In other embodiment, theabove described approaches can be applicable to manufacturing of otherthan solar cells. For example, manufacturing of light emitting diode(LEDs) may benefit from approaches described herein.

Thus, approaches for foil-based metallization of solar cells and theresulting solar cells have been disclosed.

Although specific embodiments have been described above, theseembodiments are not intended to limit the scope of the presentdisclosure, even where only a single embodiment is described withrespect to a particular feature. Examples of features provided in thedisclosure are intended to be illustrative rather than restrictiveunless stated otherwise. The above description is intended to cover suchalternatives, modifications, and equivalents as would be apparent to aperson skilled in the art having the benefit of this disclosure.

The scope of the present disclosure includes any feature or combinationof features disclosed herein (either explicitly or implicitly), or anygeneralization thereof, whether or not it mitigates any or all of theproblems addressed herein. Accordingly, new claims may be formulatedduring prosecution of this application (or an application claimingpriority thereto) to any such combination of features. In particular,with reference to the appended claims, features from dependent claimsmay be combined with those of the independent claims and features fromrespective independent claims may be combined in any appropriate mannerand not merely in the specific combinations enumerated in the appendedclaims.

1. A method of fabricating a solar cell, the method comprising: forminga plurality of alternating N-type and P-type semiconductor regions in orabove a substrate; adhering a metal foil to the alternating N-type andP-type semiconductor regions; laser ablating through only a portion ofthe metal foil at regions corresponding to locations between thealternating N-type and P-type semiconductor regions; and subsequent tothe laser ablating, isolating regions of the remaining metal foilcorresponding to the alternating N-type and P-type semiconductorregions.
 2. The method of claim 1, wherein isolating regions of theremaining metal foil comprises anodizing the remaining metal foil. 3.The method of claim 1, wherein isolating regions of the remaining metalfoil comprises etching the remaining metal foil.
 4. The method of claim1, further comprising: prior to adhering the metal foil, forming aplurality of metal seed material regions to provide a metal seedmaterial region on each of the alternating N-type and P-typesemiconductor regions, wherein adhering the metal foil to thealternating N-type and P-type semiconductor regions comprises adheringthe metal foil the plurality of metal seed material regions.
 5. Themethod of claim 4, further comprising: prior to adhering the metal foilto the plurality of metal seed material regions, forming an insulatinglayer on the plurality of metal seed material regions, wherein adheringthe metal foil to the plurality of metal seed material regions comprisesbreaking through regions of the insulating layer.
 6. The method of claim4, wherein adhering the metal foil to the plurality of metal seedmaterial regions comprises using a technique selected from the groupconsisting of a laser welding process, a thermal compression process andan ultrasonic bonding process.
 7. The method of claim 4, wherein formingthe plurality of metal seed material regions comprises forming aluminumregions each having a thickness approximately in the range of 0.3 to 20microns and comprising aluminum in an amount greater than approximately97% and silicon in an amount approximately in the range of 0-2%, whereinadhering the metal foil comprises adhering an aluminum foil having athickness approximately in the range of 5-100 microns, and whereinisolating regions of the remaining metal foil comprises anodizing thealuminum foil by oxidizing exposed surfaces of the aluminum foil to adepth approximately in the range of 1-20 microns.
 8. The method of claim1, wherein laser ablating through only the portion of the metal foilcomprises laser ablating a thickness of the metal foil approximately inthe range of 80-99% of an entire thickness of the metal foil.
 9. Themethod of claim 1, wherein forming the plurality of alternating N-typeand P-type semiconductor regions comprises forming the alternatingN-type and P-type semiconductor regions in a polycrystalline siliconlayer formed above the substrate, the method further comprising: forminga trench between each of the alternating N-type and P-type semiconductorregions, the trenches extending partially into the substrate.
 10. Themethod of claim 1, wherein the substrate is a monocrystalline siliconsubstrate, and wherein forming the plurality of alternating N-type andP-type semiconductor regions comprises forming the alternating N-typeand P-type semiconductor regions in the monocrystalline siliconsubstrate.
 11. The method of claim 1, further comprising: prior to laserablating, forming a mask layer on at least a portion of the metal foil.12. A method of fabricating a solar cell, the method comprising: forminga plurality of alternating N-type and P-type semiconductor regions in orabove a substrate; adhering an anodized metal foil to the alternatingN-type and P-type semiconductor regions, the anodized metal foil havingan anodized top surface and an anodized bottom surface with a metalportion there between, wherein adhering the anodized metal foil to thealternating N-type and P-type semiconductor regions comprises breakingthrough regions of the anodized bottom surface of the anodized metalfoil; and laser ablating through the anodized top surface and the metalportion of the anodized metal foil at regions corresponding to locationsbetween the alternating N-type and P-type semiconductor regions, whereinthe laser ablating terminates at the anodized bottom surface of theanodized metal foil isolating regions of the remaining metal foilcorresponding to the alternating N-type and P-type semiconductorregions.
 13. The method of claim 12, further comprising: prior toadhering the anodized metal foil, forming a plurality of metal seedmaterial regions to provide a metal seed material region on each of thealternating N-type and P-type semiconductor regions, wherein adheringthe anodized metal foil to the alternating N-type and P-typesemiconductor regions comprises adhering the anodized metal foil theplurality of metal seed material regions.
 14. The method of claim 13,further comprising: prior to adhering the anodized metal foil to theplurality of metal seed material regions, forming an insulating layer onthe plurality of metal seed material regions, wherein adhering theanodized metal foil to the plurality of metal seed material regionscomprises breaking through regions of the insulating layer.
 15. Themethod of claim 13, wherein adhering the anodized metal foil to theplurality of metal seed material regions comprises using a techniqueselected from the group consisting of a laser welding process, a thermalcompression process and an ultrasonic bonding process.
 16. The method ofclaim 13, wherein forming the plurality of metal seed material regionscomprises forming aluminum regions each having a thickness approximatelyin the range of 0.3 to 20 microns and comprising aluminum in an amountgreater than approximately 97% and silicon in an amount approximately inthe range of 0-2%, wherein adhering the anodized metal foil comprisesadhering an anodized aluminum foil having a total thicknessapproximately in the range of 5-100 microns with the anodized topsurface and anodized bottom surface each contributing a thicknessapproximately in the range of 1-20 microns.
 17. The method of claim 12,further comprising: prior to adhering the anodized metal foil to thealternating N-type and P-type semiconductor regions, forming a laserreflecting or absorbing film on the anodized bottom surface of theanodized metal foil.
 18. The method of claim 12, wherein forming theplurality of alternating N-type and P-type semiconductor regionscomprises forming the alternating N-type and P-type semiconductorregions in a polycrystalline silicon layer formed above the substrate,the method further comprising: forming a trench between each of thealternating N-type and P-type semiconductor regions, the trenchesextending partially into the substrate.
 19. The method of claim 12,wherein the substrate is a monocrystalline silicon substrate, andwherein forming the plurality of alternating N-type and P-typesemiconductor regions comprises forming the alternating N-type andP-type semiconductor regions in the monocrystalline silicon substrate.20. The method of claim 12, further comprising: prior to laser ablating,forming a mask layer on a portion of the anodized metal foil; andsubsequent to laser ablating, removing the mask layer. 21-22. (canceled)